Product Summary

The FP75R12KT3 is a IGBT-inverter.

Parametrics

Absolute maximum ratings: (1)collector-emitter voltage, Tvj=25℃, Vces: 1200V; (2)DC-collector current, Tc=80℃, Ic nom: 75A; (3)DC-collector current, Tc=25℃, Ic: 105A; (4)Repetive peak collector current, Tp=1ms, Tc=80℃, Icrm: 150A; (5)total power dissipation, Tc=25℃, Ptot:355W; (6)gate emitter peak voltage, Vges: ±20V.

Features

Features: (1)with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode; (2)collector-emitter saturation voltage: 1.90V; (3)gate threshold: 5.0 to 6.5V; (4)gate charge: 0.70μC; (5)internal gate resistor: 10Ω.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FP75R12KT3
FP75R12KT3
Infineon Technologies
IGBT Modules N-CH 1.2KV 105A
Data Sheet
0-6: $112.86
6-10: $101.57
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FP750SOT343
FP750SOT343
Other

Data Sheet
Negotiable 
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Data Sheet
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Data Sheet
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6-10: $98.10